Comparison between optical and electrical data on hole concentration in zinc-doped p-GaAs

The optical and electrical properties of zinc-doped Cz p -GaAs have been studied. Reflection spectra ten specimens taken in the mid-IR region. Van der Pau galvanomagnetic, resistivity Hall coefficient measurements carried out for same (all were at room temperature). reflection processed using Kramers–Kronig relations, spectral dependences real imaginary parts complex dielectric permeability calculated loss function curves plotted. maximum position has used to calculate characteristic wavenumber corresponding high-frequency plasmon-phonon mode frequency. Theoretical calculations conducted a calibration curve built up determining heavy hole concentration T = 295 K based on known wavenumber. Further matching data light mobility ratio. This ratio proves be 1.9–2.8 range which is far lower as compared with theoretical predictions assumption scattering mechanism holes (at phonons). It hypothesized that mechanisms differ.